PART |
Description |
Maker |
HY5PS121621AF HY5PS121621AF-C3 HY5PS121621AF-C4 HY |
512Mb DDR2 SDRAM 32M X 16 DDR DRAM, PBGA84 ROHS COMPLIANT, FBGA-84 32M X 16 DDR DRAM, PBGA84 FBGA-84
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM 32M X 16 DDR DRAM, 0.45 ns, PBGA84 128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
K4T51163QI-HIE70 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
|
|
EDE5116GBSA-5A-E EDE5104GBSA-4A-E EDE5116GBSA-4A-E |
512M bits DDR-II SDRAM 512M比特的DDR - II内存 512M bits DDR-II SDRAM 32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
Elpida Memory, Inc.
|
HY5PS1G1631CLFP-Y5I HY5PS1G431CLFP-Y5I HY5PS1G1631 |
64M X 16 DDR DRAM, PBGA84 256M X 4 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
IS43R16320D-5TL IS43R32160D-5BL IS46R16320D-6TLA1 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 16M X 32 DDR DRAM, 0.7 ns, PBGA144
|
INTEGRATED SILICON SOLUTION INC
|
IS43DR16640A-3DBLI |
64M X 16 DDR DRAM, 0.45 ns, PBGA84
|
INTEGRATED SILICON SOLUTION INC
|
EDE2516AASE-AE-E EDE2516AASE-DF-E |
16M X 16 DDR DRAM, 0.5 ns, PBGA84 16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
ELPIDA MEMORY INC
|
HYB18T256160AF-2.5 |
16M X 16 DDR DRAM, 0.4 ns, PBGA84
|
QIMONDA AG
|
MT46V32M16P-5BLF MT46V32M16P-5BFTR MT46V32M16P-5BL |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 512Mb: x4, x8, x16 DDR SDRAM Features 128M X 4 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
W942508CH-75 |
8M x 4 BANKS x 8 BIT DDR SDRAM 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Winbond Electronics, Corp.
|